本文总结了一些常见材料的湿法刻蚀方案和刻蚀液配比，希望能够为需要或者正在使用湿法刻蚀方案的研究者提供思路，本文内容来自网络整理，不能替代操作手册。且刻蚀方案中往往会用到酸和碱液，请查阅相关文献，且获得每一种试剂的安全物料资料并仔细阅读，另外，请务必遵守实验室操作规范和当地环保要求后方可进行实验。
金属材料湿法刻蚀
铝 – Aluminum
| 序号 Item | 浓度 Concentrations | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 | H2O : HF | |||
| 2 | 1 : 1 : 1 | HCl : HNO3 : H2O | |||
| 3 | dilute or concentrated | HCl | |||
| 4 | H3PO4 : HNO3 : HAc | ||||
| 5 | 19 : 1 : 1 : 2 | H3PO4 : HAc : HNO3 : H2O | 40 | ||
| 6 | 3 : 1 : 3 : 1 | H3PO4 : HAc : HNO3 : H2O | 8.7 @ >RT | @40℃ <4min/micron | |
| 7 | 4 : 4 : 1 : 1 | H3PO4 : HAc : HNO3 : H2O | 5.6 | ||
| 8 | 15 : 0 : 1 : 1-4 | H3PO4 : HAc : HNO3 : H2O | 1500 | 40℃ | |
| 9 | 8 : 1 : 1 | H3PO4 : H2O2 : H2O | 100 | @35℃ | |
| 10 | 3 : 1 : 5 | H3PO4 : H2O : glycerin | |||
| 11 | 83 : 5.5 : 5.5 | H3PO4 85% + CH 3COOH 100% + HNO3 70% | 50 | 35℃ | |
| 12 | 69 : 131 | HClO4 : Hac | PR | ||
| 13 | 4 : 1 : 5 | HCl : FeCl3 : H2O | |||
| 14 | FeCl3 : H2O | 100F | |||
| 15 | 10% | K3Fe(CN)6 | 100 | ||
| 16 | KOH : K3Fe(CN)6: K 2B4O7.4H2O | ||||
| 17 | 2 : 3 : 12 | KMnO4 : NaOH : H2O | |||
| 18 | 1 : 1 : 3 | NH4OH : H2O2 : H2O | |||
| 19 | 20% | NH4SO4 | |||
| 20 | dilute or concetrated | NaOH | |||
| 21 | 8-10% | KOH | |||
| 22 | CCl4 | boiling | |||
| 23 | 10% | Br2 : MeOH | warm |
铬 – Chromium
| 序号 Item | 浓度 Concentrations | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | |
| 1 | 2 : 3 : 12 | KMnO4 : NaOH : H2O | |||
| 2 | 3 : 1 | H2O : H2O2 | |||
| 3 | concentrated and dilute | HCl | |||
| 4 | 3 : 1 | HCl : H2O2 | |||
| 5 | 2 : 1 | FeCl : HCl | |||
| 6 | Cyantek CR-7s (Perchloric based) | 7 min/micron (24A/s new) | |||
| 7 | TechniEtch Cr01 (NH4)2Ce(NO3)6 + HClO4 | 65nm/min | Room temp | PR | |
| 8 | 60 g/l + 200 g/l | KMnO4 + Na3PO4 | 24nm/min | Room temp | PR，Cr selective on Cu |
| 9 | 1 : 1 | HCl : glycerine | 12min/micron after depassivation | ||
| 10 | 1 : 3 | [50gNaOH+100mlH2O] : [30g K3Fe(CN)6+100mlH2O] | 1hr/micron |
金 – Gold
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 3 : 1 | Aqua Regia HCl : HNO3 | 10-15microns/min RT, 25-50 microns/min | 35℃ | |
| 2 | 3 : 10-20% | Chrome Regia HCl : CrO3 | |||
| 3 | H2SeO4 | etch is slow | Temp should be hot | ||
| 4 | KCN in H2O | good for stripping gold from alumina, quartz, sapphire substrates, semiconductor wafers and metal parts | |||
| 5 | 25 g/l + 12 g/l | TechniEtch ACI2 KI + I2 | 60nm/min | Room temp | PR |
| 6 | 4g : 2g : 10ml | KI : I2 : H2O | 280nm/min | Hot (70℃) | |
| 7 | 1 : 2 : 3 | HF : HAc : HNO3 | |||
| 8 | 30 : 30 : 50 : 0.6 | HF : HNO3 : HAc : Br2 | |||
| 9 | NaCN : H2O2 | ||||
| 10 | 7g : 25g : 100ml | KI : Br2 : H2O | |||
| 11 | 9g : 1g : 50ml | KBr : Br2 : H2O | 800nm/min | ||
| 12 | 9g : 1g : 50ml | NaBr : Br2 : H2O | 400nm/min | ||
| 13 | 400g : 100g : 400ml | I2 : KI : H2O | 1270A/sec | 55℃ | |
| 14 | 1 : 2 : 10 | I2 : KI : H2O | |||
| 15 | 4g : 1g : 40ml | Au mask etch KI : I2 : H2O | 1min/micron |
铜 – Copper
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | FeCl3 saturated solution | ||||
| 2 | 20% | KCN | |||
| 3 | 1 : 5 | H2O : HNO3 | |||
| 4 | concentrated and dilute | HNO3 | |||
| 5 | 1 : 1 | NH4OH : H2O2 | |||
| 6 | 1 : 20 | HNO3 : H2O2 | |||
| 7 | 4 : 1 | NH3 : H2O2 | |||
| 8 | 1 : 1 : 1 | H3PO4 : HNO3 : HAc | |||
| 9 | 5ml : 5ml : 4g : 1 : 90ml | HNO3 : H2SO4 : CrO3 : NH4Cl : H2O | |||
| 10 | 60 g/l + 10 ml/l | (NH4)2S2O8 + H2SO4 96% | 200nm/min | Room temp | PR |
| 11 | 4 : 1 : 5 | HCL : FeCl3 : H2O |
镍 – Nickel
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 : 1 : 1 | HNO3 : HAc : Acetone | ||||
| 2 | 1 : 1 | HF : HNO3 | |||
| 3 | 30% | FeCl3 | |||
| 4 | 3 : 1 : 5 : 1 | HNO3 : H2SO4 : HAc : H2O | 10 microns/min | 85℃ | |
| 5 | 3 : 7 | HNO3 : H2O | |||
| 6 | 1 : 1 | HNO3 : HAc | |||
| 7 | 10% g/ml | Ce(NH4)2(NO3)6 : H2O | |||
| 8 | concentrated | HF | slow etchant | ||
| 9 | H3PO4 | slow etchant | |||
| 10 | HNO3 | rapid etchant | |||
| 11 | HF : HNO3 | etch rate determined by ratio, the greater the amount of HF the slower the reaction | |||
| 12 | 4 : 1 | HCl : HNO3 | increase HNO3 concentration increases etch rate | ||
| 13 | 30% | FeCl3 | |||
| 14 | 5g : 1ml : 150ml | 2NH4NO3.Ce(NO3)3.4(H2O) : HNO3 : H2O | decreasing HNO3 amount increases the etch rate. | ||
| 15 | 91 g/l + 7.3 g/l | (NH4)2S2O8 + FeCl3 | 100 Etches Au ~15nm/min | Room temp | PR |
| 16 | 3 : 3 : 1 : 1 | H3PO4 : HNO3 : CH3COOH : H2O | ~15min/micron | RT with air exposure every 15 seconds |
钛 – Titanium
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 50 : 1 : 1 | H2O : HF : HNO3 | |||
| 2 | 20 : 1 : 1 | H2O : HF : H2O2 | |||
| 3 | RCA-1 5 : 1 : 1 | H2O : 27% NH4OH : 30% H2O2 | ~100 min/micron | ||
| 4 | x%Br2 : ethyl acetate | Hot | |||
| 5 | x%I2 : MeOH | Hot | |||
| 6 | HF : CuSO4 | ||||
| 7 | 1 : 2 | NH4OH : H2O2 | |||
| 8 | 1 : 4 : 5 | HF : HNO3 : H2O | 18 microns/min | ||
| 9 | 1 : 2 : 7, 1 : 5 : 4, 1 : 1 : 50 | HF : HNO3 : H2O | |||
| 10 | any concentration | COOHCOOH : H2O | |||
| 11 | 1 : 1 : 20 | HF : H2O2 : HNO3 | |||
| 12 | 1 : 9 | HF : H2O | 12 A/min | ||
| 13 | 1 : 50 | HF(49%):H2O | 1000nm/min | 20℃ | PR |
| 14 | HF : HCL : H2O | ||||
| 15 | conc | HCL | |||
| 16 | conc | %KOH | |||
| 17 | conc | %NaOH | |||
| 18 | 20% | H2SO4 | 1 micron/min | ||
| 19 | CCl3COOC2H5 | ||||
| 20 | 25% | HCOOH | |||
| 21 | 20% | H3PO4 | |||
| 22 | HF |
银 – Silver
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 | NH4OH : H2O2 | |||
| 2 | 3 : 3 : 23 : 1 | H3PO4 : HNO3 : CH3COOH : H2O | ~10min/100A | ||
| 3 | 1 : 1 : 4 | NH4OH : H2O2 : CH3OH | .36micron/min resist | ||
| 4 | 1 : 1 : 1 | HCl : HNO3 : H2O | |||
| 5 | 1-8 : 1 | HNO3 : H2O | |||
| 6 | 1 M | HNO3 + light |
钨 – Tungsten
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 | HF : HNO3 | thin films | ||
| 2 | 3 : 7 | HF : HNO3 | |||
| 3 | 4 : 1 | HF : HNO3 | rapid attack | ||
| 4 | 1 : 2 | NH4OH : H2O2 | thin films good for etching tungsten from stainless steel, glass, copper and ceramics. Will etch titanium as well. | ||
| 5 | 305g : 44.5g : 1000ml | K3Fe(CN)6 : NaOH : H2O | rapid etch | ||
| 6 | HCl | slow etch (dilute or concentrated) | |||
| 7 | HNO3 | very slow etch (dilute or concentrated) | |||
| 8 | H2SO4 | slow etch (dilute or concentrated) | |||
| 9 | HF | slow etch (dilute or concentrated) | |||
| 10 | H2O2 | ||||
| 11 | 1 : 2 | NH4OH : H2O2 | |||
| 12 | 4 : 4 : 3 | HF : HNO3 : HAc | |||
| 13 | CBrF3 RIE etch | ||||
| 14 | 305g : 44.5g : 1000ml | K3Fe(CN)6 : NaOH : H2O | very rapid etch | ||
| 15 | 3 : 1 | HCL : HNO3 (Aqua Regia) | slow attack | when hot or warm | |
| 16 | Alkali with oxidizers (KNO3 and PbO2) | rapid etch |
铂 – Platinum
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 3 : 1 | HCl : HNO3 (Aqua Regia) | Hot | ||
| 2 | Molten Sulfur |
铟 – Indium
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 3 : 1 | Aqua Regia HCl : HNO3 | hot | ||
| 2 | HCl | fast | boiling | ||
| 3 | IPA | hot | |||
| 4 | EOH | hot | |||
| 5 | MeOH | hot |
钯 – Palladium
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 3 : 1 | HCl : HNO3 (Aqua Regia) | Hot |
钴 – Cobalt
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 | H2O : HNO3 | |||
| 2 | 3 : 1 | HCl : H2O2 |
锑 – Antimony
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1:1:1 | HCl : HNO3 : H2O | |||
| 2 | 90:10:1 | H2O : HNO3 : HF | |||
| 3 | 3:3:1:1 | H3PO4 : HNO3 : CH3COOH : H2O | 3min/1000A | 50C |
铋 – Bismuth
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 10:1 | H2O : HCl |
黄铜 – Brass
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | FeCl3 | ||||
| 2 | 20% | NHSO5 |
青铜 – Bronze
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1% | CrO3 |
碳 – Carbon
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | H3PO4 : CrO3 : NaCN | ||||
| 2 | 50% | KOH (or NaOH) | boiling | ||
| 3 | concentrated | HNO3 | |||
| 4 | concentrated | H2SO4 | |||
| 5 | 3:1 | H2SO4 : H2O2 |
锗 – Germanium
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | HF : HNO3 : H2O | ||||
| 2 | 1 : 1 : 1 | HF : HNO3 : HAc | |||
| 3 | 7 : 1 : | HF : HNO3 : glycerin | 35℃ 75-100 um/h，100℃ 775 um/h | ||
| 4 | pH > 6 | KF | |||
| 5 | 1 : 25 | NH 3 OH : H 2 O 2 | 1000angstrom/min |
铪 – Hafnium
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 20 : 1 : 1 | H2O : HF : H2O2 |
铱 – Iridium
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 3 : 1 | Aqua Regia HCl : HNO3 | hot |
铁 – Iron
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 | H2O : HCL | |||
| 2 | 1 : 1 | H2O : HNO3 | |||
| 3 | 1 : 2 : 10 | I2 : KI : H2O |
铅 – Lead
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 | HAc : H2O2 |
镁 – Magnesium
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 10ml : 1g | H2O : NaOH | followed by | ||
| 2 | 5ml : 1g | H2O : CrO3 |
钼 – Molybendum
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 | HCl : H2O2 | |||
| 2 | 20:4:1 | H3PO4 85% :CH3COOH 100% : HNO3 70% | 125nm/min | Room temp | PR |
铌 – Niobium
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 | HF : HNO3 |
钽 – Tantalum
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 | HF : HNO3 |
不锈钢 – Stainless Steel
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 | HF : HNO3 |
锡 – Tin
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 | HF : HCL | |||
| 2 | 1 : 1 | HF : HNO3 | |||
| 3 | 1 : 1 | HF : H2O | |||
| 4 | 2 : 7 | HClO4 : HAc |
钒 – Vanadium
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 | H2O : HNO3 | |||
| 2 | 1 : 1 | HF : HNO3 |
锌 – Zinc
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 | HCl : H2O | |||
| 2 | 1 : 1 | HNO3 : H2O |
锆 – Zirconium
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 50 : 1 : 1 | H2O : HF : HNO3 | |||
| 2 | 20 : 1 : 1 | H2O : HF : H2O2 |
铼、铑和钌 – Rhenium, Rhodium, and Ruthenium
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 3 : 1 | HCl : HNO3 (Aqua Regia) | hot |
非金属材料湿法刻蚀
硅 – Sillicon
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 64:3:33 | HNO3 : NH4F : H2O | 100 angstroms/s | ||
| 2 | 61:11:28 | ethylenediamine : C6H4(OH)2 : H2O | 78 angstroms/s | ||
| 3 | 108ml : 350g : 1000ml | HF : NH4F : H2O | slow – 0.5 angstroms/min | ||
| 4 | 1:1:50 | HF : HNO3 : H2O | slow etch | ||
| 5 | KCl dissolved in H2O | ||||
| 6 | KOH : H2O : Br2/I2 | ||||
| 7 | KOH | see section on KOH etching | |||
| 8 | 40% or diluted | KOH | From 300 to 2’000 Depending on concentration and temperature. | 60℃-90℃ | Si3N4 |
| 9 | 1 : 1 : 1.4 : 0.15% : 0.24% | HF : HNO3 : HAc : I2 : triton | |||
| 10 | 1:6:3 | HF : HNO3 : HAc | |||
| 11 | and 0.19 g NaI per 100 ml solution | ||||
| 12 | 1:4 | Iodine Etch : HAc | |||
| 13 | 0.010 N | NaI | |||
| 14 | NaOH | ||||
| 15 | HF : HNO3 | ||||
| 16 | 1:1:1 | HF : HNO3 : H2O |
非晶硅 – aSi, PolySi
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 50:3:20 | HNO3(70%):HF(49%):H2O | 730nm/min | 20℃ |
氧化硅/石英/玻璃 – Silicon Dioxide / Quartz / Glass
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | BOE 1 : 5 : 5 | HF : NH4HF : H2O | 20 angstroms/sec | ||
| 2 | HF : HNO3 | ||||
| 3 | 3:2:60 | HF : HNO3 : H2O | 2.5 angstroms/sec | Room Temp | |
| 4 | BHF 1 : 10, 1 : 100, 1 : 20 | HF : NH4F(sat) | |||
| 5 | 3ml : 15g : 22ml | HF : NH4F : H2O | |||
| 6 | Secco etch 2 : 1 | HF : 1.5M K2Cr2O7 | |||
| 7 | 5:1 | NH4.HF : NaF/L (in grams) | |||
| 8 | 4:4:2 | Silox (Pad Etch) NH4F 40% : CH3COOH 100% : H 2O | 40 (WetOx)nm/min 240 (LTO)nm/min | Room Temp | PR |
| 9 | 1g : 1ml : 10ml : 10ml | NH4F.HF : HF : H2O : glycerin | |||
| 10 | HF | Hot | |||
| 11 | HF(49%) | SiO2: 1500nm/min Si3N4: 12nm/min SixNy: 4nm/min | 20℃ | ||
| 12 | 1 : 1, 1 : 15, 1 : 100 | HF : H2O | |||
| 13 | 5 : 43, 1 : 6 | HF : NH4F(40%) | |||
| 14 | 7:1 | BHF NH4F 40% : HF 50% | 27 (Borofloat)nm/min 77 (WetOx)nm/min 86 (DryOx)nm/min 80 (Fused Silica)nm/min 250-300 (LAB HRI)nm/min 225 (LTO no densification)nm/min 120 (LTO with densification)nm/min 262 (TEOS no densification)nm/min 470 (PSG)nm/min 250 (SiO2 Spider)nm/min 70 Al2O3 (ALD)nm/min | Room temp | PR |
| 15 | 7:1 | BHF NH4F 40% : HF 50% | 35nm/min 70nm/min | Room temp 30℃ – Pyrex | Cr/PR |
| 16 | 1:4 | Diluted HF HF 49% : H2O | 198nm/mim 395nm/min 520nm/min | Room temp – Pyrex 34℃ 40℃ | Cr/PR |
| 17 | NaCO3 | 296 microns/h | 100℃ | ||
| 18 | 5% | NaOH | 3.8 mm/h | 100℃ | |
| 19 | 5% | HCl | 12.7 microns/day | 95℃ | |
| 20 | KOH | see KOH etching of silicon dioxide |
氮化硅 – Silicon Nitride
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 60 or 1 : 20 | HF : H2O | 1000-2000 A/min | ||
| 2 | BHF 1 : 2 : 2 | HF : NH4F : H2O | slow attack – but faster for silicon oxynitride | ||
| 3 | 1 : 5 or 1 : 9 | HF : NH4F (40%) | 0.01-0.02 microns/second | ||
| 4 | 3 : 25 | HF : NH4F.HF(sat) | |||
| 5 | 50ml : 50g : 100ml : 50ml | HF : NH4F.HF : H2O : glycerin | glycerin provides more uniform removal | ||
| 6 | BOE | HF : NH4F : H2O | |||
| 7 | 18g : 5g : 100ml | NaOH : KHC8H4O4 : H2O | 160 A/min, better with silicon oxynitride | boiling | |
| 8 | 9g : 25ml | NaOH : H2O | 160A/min | boiling | |
| 9 | 18g : 5g : 100ml | NaOH : (NH4)2S2O8 : H2O | 160 A/min | boiling | |
| 10 | |||||
| 11 | A) 5g : 100ml | NH4F.HF : H2O; | |||
| 12 | B)1g : 50ml : 50ml | I2 : H2O : glycerin | 180 A/min | RT – mix A and B 1 : 1 when ready to use. |
氧化锌 – Zinc Oxide
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1:60 | HCl : H2O | 1.9 microns/min | ||
| 2 | 1:200 | HCl : H2O | 0.9 microns/min | ||
| 3 | 1:500 | HCl : H2O | 0.4 microns/min | ||
| 4 | 1:900 | HCl : H2O | 0.2 microns/min | ||
| 5 | 1:100 | HNO3 : H2O | 0.9 microns/min | ||
| 6 | 1:7 | BOE | .06 microns/min | ||
| 7 | 1:7 | BOE | .06 microns/min | ||
| 8 | 1:1:30 | H3PO4 : C6H8O7 : H2O | 2.2 microns/min | ||
| 9 | 1:5:60 | H3PO4 : C6H8O7 : H2O | 1.8 microns/min | ||
| 10 | 1:1:80 | H3PO4 : C6H8O7 : H2O | 1.4 microns/min | ||
| 11 | 1:1:150 | H3PO4 : C6H8O7 : H2O | 1 micron/min | ||
| 12 | 1:1:200 | H3PO4 : C6H8O7 : H2O | 0.8 microns/min | ||
| 13 | 1:2:300 | H3PO4 : C6H8O7 : H2O | 0.65 microns/min |
砷化铝镓 – Aluminum Gallium Arsenide
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 : 30 | H2SO4 : H2O2 | 60 angstroms/sec | ||
| 2 | 8 : 3 : 400 | NH3 : H2O2 : H2O | 25 angstroms/sec | ||
| 3 | 1 : 1 : 10 | HF : H2O2 : H2O | 80 angstroms/sec |
氧化铝/蓝宝石 – Aluminum Trioxide / Alumina / Sapphire
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 : 3 | NH4OH : H2O2 : H2O | 80℃ | ||
| 2 | 10% | Br2 : MeOH | |||
| 3 | 7ml : 4g | H3PO : Cr2O3 | |||
| 4 | H3PO4 85% | 72 (ALD) 120 (Spider) | 60℃ 60℃ | PR | |
| 5 | 7:1 | BHF NH4F 40% : HF 50% | 70 (ALD) | Room temp | PR |
砷化铟镓 – Indium Gallium Arsenide
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 : 20 | H2SO4 : H2O2 : H2O | 30 angstroms/sec |
磷化铟镓 – Indium Gallium Phosphide
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | concentrated | HCl | fast |
磷化铟 – Indium Phosphide
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 | HCl : H3PO4 | fast |
磷化铟氧化物 – Indium Phosphide Oxide
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | NH4OH |
氧化锡铟 – Indium Tin Oxide
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 1 : 1 | HCl : H2O | 8 angstroms/sec | ||
| 2 | 1 : 1 : 10 | HF : H2O2 : H2O | 125 angstroms/sec |
有机/聚合物材料湿法腐蚀
光刻胶 – Photoresist
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | Acetone | ||||
| 2 | 5 : 1 | NH4OH : H2O2 | 120℃ | ||
| 3 | 5 : 1 | H2SO4 : H2O2 | |||
| 4 | H2SO4 : (NH4)2S2O8 |
聚合物 – Poylmer
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 5 : 1 | NH4OH : H2O2 | 120℃ | ||
| 2 | 5:1:1 | RCA1 H2O : NH4OH 28% : H2O2 30% | N/A Stripping/cleaning mixture | Room temp | |
| 3 | 3 : 1 | H2SO4 : H2O2 | |||
| 4 | 1 : 1 | HF : H2O | |||
| 5 | 1 : 1 | HF : HNO3 | |||
| 6 | 1 : 1 | Sodium Carbonate | boiling | ||
| 7 | 3:1 | Piranha H2SO4 96% : H2O2 30% | N/A Stripping/cleaning mixture Al, Ti, Cr, Cu, Ni, Ag are affected | Room temp but self-heating to >70°C | |
| 8 | conc | HF |
环氧树脂 – Epoxies
| 序号 Item | 蚀刻剂 Etchants | 蚀刻剂 Etchants | 速率（埃/秒） Rate (angstroms/sec) | 温度/其他 Temperature/Other | 掩膜 Mask |
| 1 | 5 : 1 | NH4OH : H2O2 | 120℃ | ||
| 2 | Gold Epoxy | ||||
| 3 | 3 : 1 : 10 | HNO3 : HCl : H2O | |||
| 4 | Silver Epoxy | ||||
| 5 | 1 : 3 | HF : HNO3 | |||
| 6 | Aluminum Epoxy | ||||
| 7 | H2SO4 | hot | |||
| 8 | SU8 cured | ||||
| 9 | 3 : 1 | H2SO4 : H2O2 | hot |
